| PART |
Description |
Maker |
| CY14B108L-ZS45XI CY14B108L-ZS45XIT |
8-Mbit (1024 K 8/512 K 16) nvSRAM
|
Cypress
|
| CY14B108K-ZS25XI CY14B108K-ZS25XIT CY14B108K-ZS45X |
8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
| IDT7280 IDT7280L IDT7280L12 IDT7280L12PA IDT7280L1 |
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9DUAL 1024 x 9 DUAL 2048 x 9DUAL 4096 x 9 DUAL 8192 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9 DUAL 512 x 9 DUAL 1024 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9,DUAL 1,024 x 9, DUAL 2,048 x 9,DUAL 4,096 x 9, DUAL 8,192 x 9
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1024 x 9
|
IDT[Integrated Device Technology]
|
| SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http://
Silicon Storage Technol...
|
| M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| SST27SF010-70-3C-NHE SST27SF010-70-3C-PHE SST27SF0 |
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M58PR512LE M58PR512LE96ZB5 M58PR256LE96ZB5 M58PR00 |
256-Mbit, 512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| IDT72511 IDT72511L25G IDT72511L25GB IDT72511L25J I |
PARALLEL BIDIRECTIONAL FIFO 512 x 18 & 1024 x 18
|
IDT[Integrated Device Technology]
|
| M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM
4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
http://
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
